半導体装置及びその製造方法

Semiconductor device and manufacturing method of the same

Abstract

PROBLEM TO BE SOLVED: To suppress variations of ON-state current of a fin transistor.SOLUTION: A semiconductor device includes: fin active regions 15a and 15b formed on a semiconductor substrate 10 and protruding from the semiconductor substrate 10; an element isolation film 16 formed on the semiconductor substrate 10 and covering the side surfaces of lower parts of the fin active regions 15a and 15b; and side walls 18a and 18b formed, from among a center part and an upper part of the fin active regions 15a and 15b which protrude from the element isolation film 16, on the side surfaces at the center part. The upper parts of the fin active regions 15a and 15b protrude from the side walls 18a and 18b.
【課題】フィントランジスタのオン電流のばらつきを抑制する。 【解決手段】半導体基板10の上に形成され、半導体基板10から突出するフィン活性領域15a,15bと、半導体基板10の上に形成され、フィン活性領域15a,15bの下部の側面を覆う素子分離膜16と、素子分離膜16から突出するフィン活性領域15a,15bの中央部及び上部のうち、中央部の側面の上に形成されたサイドウォール18a,18bとを備えている。フィン活性領域15a,15bの上部は、サイドウォール18a,18bから突出している。 【選択図】図1

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Cited By (6)

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    KR-101718191-B1March 20, 2017타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드Structure and formation method of fin-like field effect transistor
    KR-20150143254-ADecember 23, 2015타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드핀형 전계효과 트랜지스터 구조체와 그 형성방법
    US-9431478-B2August 30, 2016Samsung Electronics Co., Ltd.Semiconductor device and method of fabricating the same
    US-9490346-B2November 08, 2016Taiwan Semiconductor Manufacturing Co., Ltd.Structure and formation method of fin-like field effect transistor
    US-9490365-B2November 08, 2016Taiwan Semiconductor Manufacturing Co., Ltd.Structure and formation method of fin-like field effect transistor
    US-9502538-B2November 22, 2016Taiwan Semiconductor Manufacturing Co., LtdStructure and formation method of fin-like field effect transistor